Laser induced crystallization: A method for preparing silicon thin film solar cells

被引：4

作者：

Andra, G ^{[1
]}

Bergmann, J ^{[1
]}

Falk, F ^{[1
]}

Ose, E ^{[1
]}

机构：

[1] Inst Phys Hochtechnol EV, D-07743 Jena, Germany

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654170

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The preparation of coarse grained silicon thin films on glass suited for solar cells is investigated. We start from amorphous hydrogenated silicon thin films several 100 nm thick deposited on glass. Different laser crystallization processes are discussed. By an Ar+ laser scan the amorphous layer is melted and recrystallized to grains several 10 mu m in size. Alternatively an explosive crystallization process was applied in which the film is preheated to 1000 degrees C by an Ar+ laser. The explosive crystallization is induced by an additional Nd:YAG laser pulse. In this process at any position the melt exists only for some ns. Grains of several mu m in length were produced. The films were thickened to several mu m by simultaneous deposition of further a-Si:H and in situ epitactic crystallization applying repeated excimer laser pulses.

引用

页码：639 / 642

页数：4