Trap state photoluminescence in solid state quaterthiophene

被引：4

作者：

Cerminara, M

Meinardi, F

Borghesi, A

Sassella, A

Tubino, R

机构：

[1] INFM, I-20125 Milan, Italy

[2] Univ Milan, Dipartimento Sci Mat, I-20125 Milan, Italy

来源：

THIN SOLID FILMS | 2005年 / 474卷 / 1-2期

关键词：

oligothiophenes; optical properties; organic semiconductors; defects;

D O I：

10.1016/j.tsf.2004.09.045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence (PL) emissions from localized trap states in crystalline thin films of quaterthiophene (4T) were investigated. The analysis of the PL spectra as a function of temperature allows to characterize the main trap states involved in the light emission, obtaining their activation energy. From comparison with the data reported for other oligothiophenes (OT) with different number of conjugated rings, a general scheme for the trap-related energy levels is proposed. (C) 2004 Elsevier B.V All rights reserved.

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收藏

页码：230 / 234

页数：5

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