Microcrystalline silicon germanium: An attractive bottom-cell material for thin-film silicon-based tandem-solar-cells

被引：5

作者：

Ganguly, G ^{[1
]}

Ikeda, T ^{[1
]}

Kajiwara, K ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] Electrotech Lab, Thin Film Silicon Solar Cells Superlab, Tsukuba, Ibaraki 305, Japan

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-681

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have prepared hydrogenated microcrystalline silicon germanium by plasma enhanced CVD of a mixture of silane and germane gas diluted with hydrogen. The growth conditions have been systematically controlled to obtain large (similar to 400 Angstrom) crystallites of silicon-germanium as observed using Raman scattering and x-ray diffraction. The dangling bond (germanium) density has been reduced to <5x10(16) cm(-3) at low substrate temperatures (similar to 150 degrees C). The optical absorption spectra of the 50% Ge containing material is red-shifted compared to microcrystalline silicon, consistent with a reduction of the indirect optical gap to 0.9eV. Schottky type cells fabricated using Au on an n(+) crystalline silicon substrate confirm that the long wavelength response is remarkably enhanced in this material.

引用

页码：681 / 691

页数：11