Lock-in thermography investigation of shunts in screen-printed and PERL solar cells

被引:7
作者
Breitenstein, O [1 ]
Rakotoniaina, JP [1 ]
Neve, S [1 ]
Green, MA [1 ]
Zhao, JH [1 ]
Wang, AH [1 ]
Hahn, G [1 ]
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle An Der Saale, Germany
来源
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年
关键词
D O I
10.1109/PVSC.2002.1190551
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We compare the application of highly sensitive infrared (IR) lock-in thermography for the investigation of local shunts in multicrystalline screen-printed solar cells and in high-efficiency PERL cells made from CZ-Si. In both cell types local shunts are found, showing a nonlinear (diode-like) I-V characteristic. If a reverse bias as large as 13 V is applied, a number of additional hot spots appear in all cells. In the multicrystalline cells, some of these hot spots may be connected with crystal defects, but most of the shunts dominating under forward bias are due to technological imperfections. One of the PERL cells was completely free of shunts acting under forward bias. Only this cell showed an IN characteristic without any "second diode" contribution. This is a proof that the "second diode" current in these and probably also in most other solar Si cells is essentially due to local shunts.
引用
收藏
页码:430 / 433
页数:4
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