Room-temperature "W" diode lasers emitting at λ≈4.0 μm

被引：19

作者：

Bewley, WW

Vurgaftman, I

Kim, CS

Kim, M

Canedy, CL

Meyer, JR

Bruno, JD

Towner, FJ

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Max Technol Inc, Hyattsville, MD 20782 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 23期

关键词：

D O I：

10.1063/1.1834714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Type-II "W" diode lasers with ten quantum-well periods operated in pulsed mode to 315 K, where the emission wavelength was 4.02 mum. The devices with uncoated facets had a threshold current density of 145 A/cm(2) and slope efficiency of 47 mW/A per facet at 78 K, and displayed a characteristic temperature T(0)approximate to46 K in the range 78-300 K. (C) 2004 American Institute of Physics.

引用

收藏

页码：5544 / 5546

页数：3

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