Fabrication and characteristics of Schottky diode based on composite organic semiconductors

被引：48

作者：

Gupta, RK ^{[1
]}

Singh, RA ^{[1
]}

机构：

[1] Banaras Hindu Univ, Fac Sci, Dept Chem, Mol Elect Lab, Varanasi 221005, Uttar Pradesh, India

来源：

COMPOSITES SCIENCE AND TECHNOLOGY | 2005年 / 65卷 / 3-4期

关键词：

polymers; electrical properties; non-linear behavior;

D O I：

10.1016/j.compscitech.2004.09.006

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Schottky barrier diode based on composite of polyaniline with polystyrene has been fabricated and characterized using indium as Schottky contact and platinum as an ohmic contact. Current-voltage (I-V) plots were non-linear and capacitance-voltage (C-V) plots were almost linear in reverse bias indicating rectification behavior. Various junction parameters were calculated from the temperature dependent I-V and C-V data and discussed. These results indicate that the composite materials have better mechanical strength and diode quality compare to that of pure polymer. (C) 2004 Elsevier Ltd. Ail rights reserved.

引用

页码：677 / 681

页数：5

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