SHI-induced grain growth and grain fragmentation effects in polymer-embedded US quantum dot systems

被引:46
作者
Mohanta, D
Mishra, NC
Choudhury, A
机构
[1] Tezpur Univ, Dept Phys, Assam 784028, India
[2] Utkal Univ, Dept Phys, Bhubaneswar 751004, Orissa, India
[3] Nucl Sci Ctr, New Delhi 110067, India
关键词
quantum dot; ion irradiation; PVOH; SBR;
D O I
10.1016/j.matlet.2004.06.061
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Quantum dots were fabricated in two varieties of polymer matrices, namely, polyvinyl alcohol (PVOH) and carboxylated styrene butadiene rubber (SBR). They were irradiated with a 100-MeV chlorine beam at fluences 10(11), 5 x 10(11), 5 x 10(12) and 10(13) ionS/cm(2). The melting of grains and coalesce of quantum dots have been observed in case of powder US and PVOH-embedded US quantum dot samples, respectively, while grain bursting predominates in quantum dots embedded in SBR hosts, as revealed from high-resolution electron microscopy. The splitting or melting of nanometric grains (quantum dots) was found to be dependent on irradiation fluence and the physical properties of host matrices for the same energy value of the projectile ion. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:3694 / 3699
页数:6
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