Interface depolarization field as common denominator of fatigue and size effect in Pb(Zr0.54Ti0.46)O3 ferroelectric thin film capacitors

被引:20
作者
Bouregba, R. [1 ]
Sama, N. [2 ]
Soyer, C. [2 ]
Poullain, G. [1 ]
Remiens, D. [2 ]
机构
[1] Univ Caen, CNRS, UMR 6508, Lab CRISMAT ENSICAEN, F-14050 Caen, France
[2] CNRS, UMR 8520, IEMN DOAE, F-59655 Villeneuve Dascq, France
关键词
POLARIZATION FATIGUE; THICKNESS; HETEROSTRUCTURES; SUPPRESSION; ELECTRODES; SCENARIOS; MECHANISM; VOLTAGE; MODEL; LAYER;
D O I
10.1063/1.3380837
中图分类号
O59 [应用物理学];
学科分类号
摘要
Dielectric, hysteresis and fatigue measurements are performed on Pb (Zr0.54Ti0.46)O-3 (PZT) thin film capacitors with different thicknesses and different electrode configurations, using platinum and LaNiO3 conducting oxide. The data are compared with those collected in a previous work devoted to study of size effect by R. Bouregba et al., (J. Appl. Phys. 106, 044101 (2009)]. Deterioration of the ferroelectric properties, consecutive to fatigue cycling and thickness downscaling, presents very similar characteristics and allows drawing up a direct correlation between the two phenomena. Namely, interface depolarization field (E-dep) resulting from interface chemistry is found to be the common denominator, fatigue phenomena is manifestation of strengthen of E-dep in the course of time. Change in dielectric permittivity, in remnant and coercive values as well as in the shape of hysteresis loops are mediated by competition between degradation of dielectric properties of the interfaces and possible accumulation of interface space charge. It is proposed that presence in the band gap of trap energy levels with large time constant due to defects in small nonferroelectric regions at the electrode-PZT film interfaces ultimately governs the aging process. Size effect and aging process may be seen as two facets of the same underlying mechanism, the only difference lies in the observation time of the phenomena. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3380837]
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页数:9
相关论文
共 37 条
[1]   Effect of B-site cation stoichiometry on electrical fatigue of RuO2/Pb(ZrxTi1-x)O-3/RuO2 capacitors [J].
AlShareef, HN ;
Tuttle, BA ;
Warren, WL ;
Headley, TJ ;
Dimos, D ;
Voigt, JA ;
Nasby, RD .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (02) :1013-1016
[2]   Investigation of thickness dependence of the ferroelectric properties of Pb(Zr0.6Ti0.4)O3 thin-film capacitors -: art. no. 034102 [J].
Bouregba, R ;
Le Rhun, G ;
Poullain, G ;
Leclerc, G .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (03)
[3]  
Bouregba R, 2002, ISAF 2002: PROCEEDINGS OF THE 13TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, P11
[4]   Analysis of size effects in Pb(Zr0.54Ti0.46)O3 thin film capacitors with platinum and LaNiO3 conducting oxide electrodes [J].
Bouregba, R. ;
Sama, N. ;
Soyer, C. ;
Remiens, D. .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (04)
[5]   Abrupt appearance of the domain pattern and fatigue of thin ferroelectric films [J].
Bratkovsky, AM ;
Levanyuk, AP .
PHYSICAL REVIEW LETTERS, 2000, 84 (14) :3177-3180
[6]   A PHYSICAL MODEL FOR THE ELECTRICAL HYSTERESIS OF THIN-FILM FERROELECTRIC CAPACITORS [J].
BRENNAN, CJ .
FERROELECTRICS, 1992, 132 (1-4) :245-257
[7]   Effect of textured LaNiO3 electrode on the fatigue improvement of Pb(Zr0.53Ti0.47)O-3 thin films [J].
Chen, MS ;
Wu, TB ;
Wu, JM .
APPLIED PHYSICS LETTERS, 1996, 68 (10) :1430-1432
[8]   Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition [J].
Cillessen, JFM ;
Prins, MWJ ;
Wolf, RM .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2777-2783
[9]   Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin films capacitors with Pt electrodes [J].
Colla, EL ;
Taylor, DV ;
Tagantsev, AK ;
Setter, N .
APPLIED PHYSICS LETTERS, 1998, 72 (19) :2478-2480
[10]   A model for fatigue in ferroelectric perovskite thin films [J].
Dawber, M ;
Scott, JF .
APPLIED PHYSICS LETTERS, 2000, 76 (08) :1060-1062