The role of hydrogen-bonds for electronic properties in transition-metal compounds

被引：2

作者：

Matsushita, E ^{[1
]}

机构：

[1] Gifu Univ, Fac Engn, Gifu 50111, Japan

来源：

FERROELECTRICS | 1997年 / 203卷 / 1-4期

关键词：

hydrogen-bond; transition-metal; electronic properties;

D O I：

10.1080/00150199708012859

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The role of hydrogen-bonds playing for electronic properties is studied from the theoretical viewpoint in two kinds of transition-metal (TM) compounds: halogen-bridged mixed-valence TM-complexes (type I) and perovskite-type hole-doped TM-oxides under hydrogen-containing atmosphere (type II). It is discussed that the correlation among charge-density-wave chains (type I) and the electric conduction (type II) can be controlled by the proton motion on the hydrogen-bonds in these compounds.

引用

收藏

页码：349 / 365

页数：17

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