Co-planar carbon nanotube hybrid molecular transistors fabricated in parallel

被引:8
作者
Ondarçuhu, T [1 ]
Joachim, C [1 ]
Gerdes, S [1 ]
机构
[1] CNRS, CEMES, F-31055 Toulouse 4, France
来源
EUROPHYSICS LETTERS | 2000年 / 52卷 / 02期
关键词
D O I
10.1209/epl/i2000-00420-8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We show that a molecular combing process can be used to fabricate in parallel, in one step, a large number of co-planar carbon nanotube hybrid molecular transistors. The gate voltage is applied by the electrodes of a nanojunction thus increasing the miniaturisation of thr device. We show with such devices that the bias coplanar grid is riot very active on metal-like nanotubes and that the same conductance change can be obtained by deforming the tube by the tip of all atomic force microscope. On the contrary, the grill is very active on a semiconductor-like tube leading to transconductances of 160 nA/V.
引用
收藏
页码:178 / 184
页数:7
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