Improving performance of superstrate p-i-n a-Si solar cells by optimization of n/TCO/metal back contacts

被引：6

作者：

Hegedus, SS ^{[1
]}

Buchanan, WA ^{[1
]}

Eser, E ^{[1
]}

机构：

[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654161

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A comprehensive study of the n-layer and back contact for superstrate (glass/textured SnO2/p-i-n/TCO/metal) a-Si solar cells is presented. In particular, the difference between a-Si and mu c-Si n-layers are compared. These results show that the efficiency can be improved from 7% to 10% (absolute) by optimizing the back contact layers to incorporate a good optical back reflector. A rectifying contact is formed between the TCO and a-Si n-layer which reduces FF. A mu c-Si n-layer eliminates the blocking n/TCO contact. Results suggest that the n/TCO interface has a controlling influence. ZnO gives similar to 1 mA/cm(2) higher J(sc) compared to ITO. The best contacts are mu c-Si/ZnO/metal.

引用

页码：603 / 606

页数：4