A novel gas sensor design based on CH4/H2/H2O plasma etched ZnO thin films

被引：68

作者：

Gruber, D ^{[1
]}

Kraus, F ^{[1
]}

Müller, J ^{[1
]}

机构：

[1] Tech Univ Hamburg, Dept Micro Syst Technol, D-21071 Hamburg, Germany

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2003年 / 92卷 / 1-2期

关键词：

methane/hydrogen plasma etching; zinc oxide; ZnO; gas sensor;

D O I：

10.1016/S0925-4005(03)00013-3

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A reactively sputtered ZnO thin film layer is employed as the gas-sensitive material in a novel gas sensor design with extended bordering areas of active catalyst to the metal oxide. The effect of the change in ohmic resistance of the ZnO thin film layer in the presence of different gases is used for gas measurements. A CH4/H-2/H2O plasma etching process is established for the microstructuring of the ZnO to realize the novel sensor design. The sputter-deposited ZnO thin films are characterized by scanning electron microscopy (SEM), surface profilometry, and X-ray diffractometry (XRD). (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：81 / 89

页数：9

共 22 条

[1] ETCHING OF INDIUM TIN OXIDE IN METHANE/HYDROGEN PLASMAS [J].

ADESIDA, I ;

BALLEGEER, DG ;

SEO, JW ;

KETTERSON, A ;

CHANG, H ;

CHENG, KY ;

GESSERT, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06) :3551-3554

[2]

Azaroff L.V., 1968, Elements of X-ray Crystallography, P552

[3] CHEMISORPTION AND CHARGE-TRANSFER AT IONIC SEMICONDUCTOR SURFACES - IMPLICATIONS IN DESIGNING GAS SENSORS [J].

GOPEL, W .

PROGRESS IN SURFACE SCIENCE, 1985, 20 (01) :9-103

[4] Transparent conducting ZnO thin films prepared by XeCl excimer laser ablation [J].

Hiramatsu, M ;

Imaeda, K ;

Horio, N ;

Nawata, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (02) :669-673

[5]

HOFFHEINS B, 1996, HDB CHEM BIOL SENSOR, P371

[6]

IBBOTSON DE, 1988, SOLID STATE TECHNOL, V31, P105

[7] POST-DEPOSITION ANNEALING BEHAVIOR OF RF SPUTTERED ZNO FILMS [J].

LAD, RJ ;

FUNKENBUSCH, PD ;

AITA, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :808-811

[8] Dry etching of ZnO using an inductively coupled plasma [J].

Lee, JM ;

Chang, KM ;

Kim, KK ;

Choi, WK ;

Park, SJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (01) :G1-G3

[9]

LIDE DR, 2000, CRC HDB CHEM PHYSICS, P74

[10]

MADELUNG O, 1982, LANDOLTBORNSTEIN B, V3, P44

← 1 2 3 →