Piezoelectric thin AlN films for bulk acoustic wave (BAW) resonators

被引：137

作者：

Loebl, HP

Klee, M

Metzmacher, C

Brand, W

Milsom, R

Lok, P

机构：

[1] Philips Res Labs, D-52066 Aachen, Germany

[2] Philips Res Labs, Redhill RH1 5HA, Surrey, England

[3] Philips Semicond, MSI, NL-6534 AE Nijmegen, Netherlands

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 79卷 / 2-3期

关键词：

AlN; bulk acoustic wave; resonator;

D O I：

10.1016/S0254-0584(02)00252-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film bulk acoustic wave (BAW) resonators and filters are well suited for mobile communication systems operating at high frequencies between 0.5 and 10 GHz. Piezoelectric thin film materials investigated for BAW devices within Philips include AlN thin films. The relationship between sputter deposition conditions, AlN film structure, electromechanical coupling factor k(t), and relevant electrical parameters of BAW devices are discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：143 / 146

页数：4

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