Electrical properties of heterogeneously doped yttria stabilized zirconia

被引:33
作者
Kumar, B
Chen, C
Varanasi, C
Fellner, JP
机构
[1] Univ Dayton, Res Inst, Div Met & Ceram, Dayton, OH 45469 USA
[2] USAF, Res Lab, Propuls Directorate, Wright Patterson AFB, OH 45433 USA
关键词
dopant; zirconia; ionic conductivity; microstructure;
D O I
10.1016/j.jpowsour.2004.08.016
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This paper reports the effects of heterogeneously doped Al2O3 on the ionic conductivity of yttria stabilized zirconia (YSZ). At lower dopant concentration, grain growth occurred and the grain boundaries were re-formed. Subsequent increases in the dopant concentration decreased the grain size. The doping leads to the creation of space charge regions in the vicinity of the YSZ-Al2O3 boundaries, conducive to enhanced transport of oxygen ions. The presence of Al2O3 also leads to a blocking effect. The net result of the two antagonistic influences is small and reflected by a relatively minor influence on conductivity. (C) 2004 Elsevier B.V. All rights reserved.
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页码:12 / 20
页数:9
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