Effect of reduced deposition temperature, time, and thickness on Cu(InGa)Se2 films and devices

被引：32

作者：

Shafarman, WN ^{[1
]}

Birkmire, RW ^{[1
]}

Marsillac, S ^{[1
]}

Marudachalam, M ^{[1
]}

Orbey, N ^{[1
]}

Russell, TWF ^{[1
]}

机构：

[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654095

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper will address the ability to reduce process costs for multisource evaporation of Cu(InGa)Se-2 by reducing the deposition temperature and film thickness and increasing the deposition rate. Substrate temperature (T-ss) is varied from 600 greater than or equal to T-ss greater than or equal to 350 degrees C using fixed elemental fluxes. The grain size decreases over the entire range but Na incorporation from the soda lime glass substrate doesn't change. Solar cell efficiency decreases slowly for 550 greater than or equal to T-ss greater than or equal to 400 degrees C. At T-ss below 400 degrees C there is a change in composition attributed to a change in the re-evaporation of In and Ga species in the growing film. Device performance is shown to be unaffected by reducing the film thickness from 2.5 to less than 1.5 mu m. Finally, a kinetic reaction model is presented for the growth of CuInSe2 by multisource elemental evaporation which provides quantitative predictions of the time to grow CuInSe2 films as a function of substrate temperature and delivery rate.

引用

页码：331 / 334

页数：4