共 22 条
[3]
PLASMA-ETCHING OF III-V SEMICONDUCTORS IN CH4/H2/AR ELECTRON-CYCLOTRON RESONANCE DISCHARGES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1990, 8 (04)
:596-606
[5]
Influence of the gas mixture on the reactive ion etching of InP in CH4-H-2 plasmas
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1997, 15 (05)
:1733-1740
[6]
FEURPRIER Y, UNPUB J VAC SCI TE B
[7]
REACTIVE ION ETCHING OF INP USING CH4/H2 MIXTURES - MECHANISMS OF ETCHING AND ANISOTROPY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1989, 7 (05)
:1130-1140