Evolution of texture and microstructure in rough polycrystalline silicon for advanced DRAM applications

被引：1

作者：

Banerjee, A ^{[1
]}

Wise, RL ^{[1
]}

Crenshaw, DL ^{[1
]}

Khamankar, RB ^{[1
]}

Edwards, H ^{[1
]}

机构：

[1] Texas Instruments Inc, Semicond Proc & Device Ctr, Dallas, TX 75265 USA

来源：

POLYCRYSTALLINE THIN FILMS - STRUCTURE, TEXTURE, PROPERTIES AND APPLICATIONS III | 1997年 / 472卷

关键词：

D O I：

10.1557/PROC-472-433

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This study investigates the morphology, roughness and electrical performance of rough polysilicon films deposited by LPCVD process. The deposition duration was varied over a broad range to study the evolution of microstructural texture in terms of nuclei formation, growth and grain coalescence. The area enhancement factor (AEF) of rough polysilicon film, expressed as the ratio of cell capacitance incorporating textured film to that of a smooth polysilicon film is observed to range from 1.4 to 2.4 for the above conditions. It is observed that the AEF shows a strong dependence on the microstructural texture and correlates with the surface roughness. A model for electrical AEF based on grain morphology attributes from AFM is included. The dependence of rough polysilicon nucleus cluster density on silane flow rate and deposition temperature is also presented.

引用

页码：433 / 438

页数：6