Influence of front contact material on silicon heterojunction solar cell performance

被引：8

作者：

Rizzoli, R ^{[1
]}

Galloni, R ^{[1
]}

Summonte, C ^{[1
]}

Pinghini, R ^{[1
]}

Centurioni, E ^{[1
]}

Zignani, F ^{[1
]}

Desalvo, A ^{[1
]}

Rava, P ^{[1
]}

Madan, A ^{[1
]}

机构：

[1] CNR, I-40126 Bologna, Italy

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-807

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The emitter of amorphous/crystalline silicon heterojunction (HJ) solar cells is normally very thin. Consequently, the metal used as a front contact can produce a partial or even total depletion of this layer. As a result, the diffusion potential of the p-n junction deviates from its maximum value. In this paper, we report the results concerning HJ in which either metal dots (Au, Al), semitransparent metal layers, or indium tin oxide (ITO) dots or layers were used as front contact on the same HJ structure, namely (p)a-Si:H/(i)a-Si:H/(n)c-Si/Al. We show that, for thin players, the dark and light J-V characteristics of HJ solar cells depend on the material used as front contact. In particular, we found that the dark saturation current increases if a low work function material is used. This increase is interpreted in terms of p-layer depletion, and is shown to directly influence the J-V characteristics under illumination, producing a reduction of the open circuit voltage of solar cells.

引用

页码：807 / 812

页数：6