Fabrication of regioregular poly (3-hexylthiophene) field-effect transistors by dip-coating

被引：70

作者：

Wang, GM ^{[1
]}

Hirasa, T ^{[1
]}

Moses, D ^{[1
]}

Heeger, AJ ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Inst Polymers & Organ Solids, Mitsubishi Chem Ctr Adv Mat, Santa Barbara, CA 93106 USA

来源：

SYNTHETIC METALS | 2004年 / 146卷 / 02期

关键词：

regioregular poly(3-hexylthiophene) (RR-P3HT); field-effect transistors (FETs); dip-coating; AFM images;

D O I：

10.1016/j.synthmet.2004.06.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the influence of dip-coating speed and concentration of the polymer solution on the characteristics of field-effect transistors (FETs) fabricated in the bottom-contact structure with regioregular poly(3-hexylthiophene) (RR-P3HT) as the active semiconducting material. For each concentration of the polymer in solution, there is an optimum dip coating speed for film deposition with highest field effect mobility; for example, with chloroform as solvent the optimum speed is 0.5 mm/min for a solution containing 1.0 mg/ml and 1.0 mm/min for a solution containing 2.5 mg/ml. Based upon AFM studies of the resulting film morphology, we conclude that the formation of a "rod-like" morphology is the origin of the improved carrier transport in the FET channel. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：127 / 132

页数：6

共 16 条

[1] Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility [J].