X-ray microscopy in Zernike phase contrast mode at 4 keV photon energy with 60 nm resolution

被引：72

作者：

Neuhäusler, U

Schneider, G

Ludwig, W

Meyer, MA

Zschech, E

Hambach, D

机构：

[1] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[2] Lawrence Berkeley Natl Lab, Ctr Xray Opt, Berkeley, CA 94720 USA

[3] AMD Saxony LLC & Co KG, D-01330 Dresden, Germany

[4] Univ Gottingen, Inst Rontgenphys, D-37073 Gottingen, Germany

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2003年 / 36卷 / 10A期

关键词：

D O I：

10.1088/0022-3727/36/10A/316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on x-ray microscopy of advanced microelectronic devices imaged in Zernike-type phase contrast mode at 4 keV photon energy. Fresnel zone plates were used as high resolution x-ray objectives providing 60 nm spatial resolution. Integrated circuit copper interconnect structures were imaged in positive as well as negative phase contrast. In both cases the phase contrast in the x-ray images is about five times higher than the pure absorption contrast.

引用

页码：A79 / A82

页数：4

共 11 条

[1] Feasibility of transmission x-ray microscopy at 4 keV with spatial resolutions below 150 nm [J].