First-principles studies of SnS2 nanotubes:: A potential semiconductor nanowire

被引:52
作者
Chang, HJ [1 ]
In, EJ [1 ]
Kong, KJ [1 ]
Lee, JO [1 ]
Choi, YM [1 ]
Ryu, BH [1 ]
机构
[1] Korea Res Inst Chem Technol, Adv Mat Div, Taejon 305600, South Korea
关键词
D O I
10.1021/jp044983o
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
First principles calculations are used to predict the stability and electronic structures of SnS2 nanotubes. Optimization of several structures and their corresponding strain energies confirm the stability of SnS2 nanotube structures. Band structure calculations show that SnS2 nanotubes could have moderate band gaps regardless of their chirality. It suggests that SnS2 nanotubes would be well-suited to use as semiconductor wires in nanoelectronic devices if they are synthesized. Adsorption of NH3 onto SnS2 is also investigated and discussed with regard to potential sensor application.
引用
收藏
页码:30 / 32
页数:3
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