Influence of thermal barriers on heat flow in high quality chemical vapor deposited diamond

被引:14
作者
Hartmann, J
Costello, M
Reichling, M
机构
[1] Free Univ Berlin, Fachbereich Phys, D-14195 Berlin, Germany
[2] GEC Marconi Ltd, Mat Technol, Towcester, Northants, England
关键词
D O I
10.1103/PhysRevLett.80.117
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Thermal barriers in high quality chemical vapor deposited (CVD) diamond were investigated by photothermal microscopy. High resolution measurements confirm that the in-plane heat transport is strongly limited by the presence of thermal barriers. Thermal resistances in the range of 10(-9) to 10(-8) m(2)K/W located at grain boundaries are extracted from photothermal line scans. Recently published data on macroscopic one-dimensional thermal transport in CVD diamond are well explained by the microscopic measurements in connection with a simple one-dimensional heat flow model.
引用
收藏
页码:117 / 120
页数:4
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