Photocurrent study of the valence band splitting of AgInS2 epilayers on GaAs

被引:28
作者
Hong, KJ [1 ]
Jeong, JW
Jeong, TS
Youn, CJ
Lee, WS
Park, JS
Shin, DC
机构
[1] Chosun Univ, Dept Phys, Kwangju 501759, South Korea
[2] Chonbuk Natl Univ, Semicond Phys Res Ctr, Jeonju 561756, South Korea
[3] Chosun Univ, Dept Elect Engn, Kwangju 501759, South Korea
[4] Chosun Univ, Div Met & Mat Sci Engn, Kwangju 501759, South Korea
关键词
semiconductors; epitaxial growth; optical properties;
D O I
10.1016/S0022-3697(03)00026-X
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
AgInS2 epilayers have been grown on a GaAs substrate by using the hot-wall epitaxy method. The temperature dependence of the band gap energy of AgInS2, is determined to be E-g(T) = 2.1365 eV - (9.89 X 10(-3) eV)T-2/(2930 + T) using the absorption spectra. The free exciton binding energy, Deltacr, and Deltaso of the chalcopyrite AgInS2 have been found to be 0.1115, 0.1541, and 0.0129 eV, respectively. This result reveals that the Deltaso splitting clearly exists for the Gamma(5) states of the valence band in the AgInS2 epilayer. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1119 / 1124
页数:6
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