Effect of surface orientation on the growth and properties of Cu(In,Ga)Se2

被引：4

作者：

Liao, DX ^{[1
]}

Rockett, A ^{[1
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190615

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The effects of surface orientation on growth from the vapor phase and properties of Cu(In,Ga)Se-2 on GaAs (001), (111)B, (111)A, and (110) are discussed. Faceting was observed on CIGS on GaAs (110), resulting in two polar (112) facet types with strikingly different surface morphologies. The {112}(Se) surface is assigned as the growth front, while growth on {112}(Metal) planes is relatively slow. A study of CIGS on GaAs (111)A and (111)B substrates was carried out and we present a growth model based on the results. The possible surface reconstructions, chemical compositions and the electronic structures of the two {112} surfaces have been investigated and are discussed in the context of CdS/CIGS interfaces and device performances.

引用

页码：515 / 518

页数：4