Origin of metal-insulator transition temperature enhancement in underdoped lanthanum manganite films

被引：84

作者：

Murugavel, P ^{[1
]}

Lee, JH

Yoon, JG

Noh, TW

Chung, JS

Heu, M

Yoon, S

机构：

[1] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

[2] Seoul Natl Univ, Res Ctr Oxide Elect, Seoul 151747, South Korea

[3] Soongsil Univ, Dept Phys, Seoul 156743, South Korea

[4] Catholic Univ Korea, Dept Phys, Puchon 420743, South Korea

[5] Univ Suwon, Dept Phys, Kyunggi Gi 445743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 12期

关键词：

D O I：

10.1063/1.1563740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility of controlling transport properties of colossal magnetoresistance manganite films using substrate-induced strain has attracted great interest. We have investigated transport properties of La0.9Ca0.1MnO3, La0.92Ba0.08MnO3, La0.8Ba0.2MnO3, and LaMnO3 films. When the films were post-annealed at proper conditions, all of them showed metal-insulator transitions. Their transition temperatures T-MI were much higher than the corresponding bulk values, irrespective of the type of substrate-induced biaxial strain. This surprising fact demonstrated that strain could not be the main origin of the T-MI enhancement observed in the underdoped (dopant concentration x<0.3) manganite films. We suggested that T-MI enhancements should be attributed mostly to the cationic vacancies in the post-annealed films. (C) 2003 American Institute of Physics.

引用

页码：1908 / 1910

页数：3

共 18 条

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