Design strategies for 157 nm single-layer photoresists:: Lithographic evaluation of a poly(α-trifluoromethyl vinyl alcohol) copolymer

被引：45

作者：

Schmaljohann, D ^{[1
]}

Bae, YC ^{[1
]}

Weibel, GL ^{[1
]}

Hamad, AH ^{[1
]}

Ober, CK ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2 | 2000年 / 3999卷

关键词：

photoresist; 157 nm lithography; poly(vinyl alcohol-co-alpha-trifluoromethyl vinyl alcohol); THP protection; chemical amplification; aqueous base solubility;

D O I：

10.1117/12.388297

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Poly(vinyl alcohol-co-alpha-trifluoromethyl vinyl alcohol) (PVA-co-CF(3)PVA) protected with an acid cleavable group was prepared as a single-layer photoresist for use in 157 nm VUV lithography. It was found that the alpha-trifluoromethyl substituent renders PVA-co-CF(3)PVA readily soluble in 0.262 N TMAH. The protected polymer can be spin-coated from PGMEA and preliminary studies using 248 nm exposure showed a THP protected PVA-co-CF(3)PVA undergoes chemically amplified deprotection with a clearing dose of similar to 15 mJ/cm(2). Using a VUV spectrometer, absorption coefficients of similar to 3 mu m(-1) were observed at 157 nm with PVA-co-CF(3)PVA and THP protected PVA-co-CF(3)PVA. Detailed lithographic evaluation of the polymer is underway and design strategies for 157 nm single-layer photoresists will be discussed.

引用

页码：330 / 334

页数：3

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