Sensing properties to dilute hydrogen sulfide of ZnSb2O6 thick-film prepared by dip-coating method

被引:42
作者
Tamaki, J [1 ]
Yamada, Y
Yamamoto, Y
Matsuoka, M
Ota, I
机构
[1] Ritsumeikan Univ, Fac Sci & Engn, Dept Chem, Shiga 5258577, Japan
[2] Nissan Chem Ind Co Ltd, Cent Res Inst, Funabashi, Chiba 2740062, Japan
关键词
semiconductor gas sensor; zinc antimonate; dip coating; dilute H2S;
D O I
10.1016/S0925-4005(99)00408-6
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The ZnSb2O6 thick-film was prepared by dip-coating into sol solution (30.4 and 15.2 wt.%), in which fine particles of ZnSb2O6 were dispersed, followed by calcination at 500-1000 degrees C for 1 h in air. The sensing properties to dilute H2S were examined for the films prepared under various conditions. The 0.7-mu m-thick film prepared from the twice-diluted sol solution (15.2 wt.%) and calcined at 900 degrees C exhibited the excellent sensing properties to dilute H2S. The film could detect H2S as dilute as 0.01 ppm, which was lower than the legal regulation value for H2S. The film showed good selectivity to H2S and the response was stable for repeated exposure to H2S. The film consisted of large grains (60-100 nm), which had contact with each other, and open pores (100-150 nm), which formed the well-developed channel in the whole film. This is attributable for the excellent sensing properties. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:70 / 73
页数:4
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