Evolution of spectral function in a doped Mott insulator: Surface vs bulk contributions

被引：86

作者：

Maiti, K ^{[1
]}

Mahadevan, P

Sarma, DD

机构：

[1] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India

[2] Indian Inst Sci, Jawaharlal Nehru Ctr Adv Sci Res, Bangalore 560012, Karnataka, India

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.80.2885

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the evolution of the spectral function with progressive hole doping in a Mott insulator, La1-xCaxVO3 with x = 0.0-0.5. The spectral features indicate a bulk-to-surface metal-insulator transition in this system. Doping dependent changes in the bulk electronic structure are shown to be incompatible with existing theoretical predictions. An empirical description based on the single parameter U/W is shown to describe consistently the spectral evolution.

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页码：2885 / 2888

页数：4

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