Czochralski growth and characterization of (Lu1-xGdx)(2)SiO5 single crystals for scintillators

被引：61

作者：

Loutts, GB ^{[1
]}

Zagumennyi, AI ^{[1
]}

Lavrishchev, SV ^{[1
]}

Zavartsev, YD ^{[1
]}

Studenikin, PA ^{[1
]}

机构：

[1] MOSCOW GEN PHYS INST,MOSCOW 117942,RUSSIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 174卷 / 1-4期

基金：

美国国家航空航天局;

关键词：

Czochralski; oxyorthosilicate; mixed crystals; GSO; LSO; scintillator;

D O I：

10.1016/S0022-0248(96)01171-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The Czochralski growth of high quality single crystals of cerium doped mixed oxyorthosilicates, (Lu1-xGdx)(2)SiO5, where, x = 0, 0.2, 0.5, 0.9, and 1.0 is reported. Their growth conditions, defects, structural stability, physical and scintillation properties versus composition have been evaluated. The mixed crystals can be an alternative to both LSO and GSO scintillators.

引用

页码：331 / 336

页数：6

共 10 条

[1]

AKIYAMA S, 1993, Patent No. 5264154

[2]

ANANEVA GV, 1981, IAN SSSR NEORG MATER, V17, P1037

[3]

BELT RF, 1986, P OSA TOP M SPR SER, V52, P94

[4] CZOCHRALSKI GROWTH OF RARE-EARTH ORTHOSILICATES (LN2SIO5) [J].