Process technologies for advanced metallization and interconnect systems

被引：22

作者：

Sun, SC ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, Hsinchu, Taiwan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As device interconnects continue to scale,copper metallization and low dielectric constant materials will begin as soon as the 180 nm technology. Damascene approach with either CVD or PVD conformal coverage of good diffusion barrier layers, enhanced filling of Cu by CVD or electroplating as well as chemical-mechanical polishing of low-k material and Cu may be required to achieve high-level integration.

引用

页码：765 / 768

页数：4