Study of reactive DC magnetron sputtering deposition of AlN thin films

AIN thin films, 326-366 nm thick, were deposited by reactive d.c. magnetron sputtering on glass and monocrystal KCI substrates. The deposition parameters (nitrogen partial pressure, total sputtering pressure, discharge voltage and deposition time) were correlated and their influences on the structural and optical properties of the films were determined by means of X-ray diffraction, scanning electron microscopy and spectrophotometry. The experimental results confirmed the polycrystalline hexagonal wurtzite structure of AIN thin films. The c-axis orientation increase with decreasing of N-2 concentration. The deposited AIN films at lower N-2 partial pressure possess better optical constants-higher value of refractive index and lower value of coefficient of extinction. All the deposition films are transparent in the visible region with average transmittance about 83%. (C) 1998 Elsevier Science Ltd. All rights reserved.