Experimental results and simulation of substrate noise coupling via planar spiral inductor in RF ICs

被引：13

作者：

Pun, A ^{[1
]}

Yeung, T ^{[1
]}

Lau, J ^{[1
]}

Clement, FJR ^{[1
]}

Su, D ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept EEE, Hong Kong, Peoples R China

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650393

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

While previous studies [3] on substrate coupling focused mostly on noise induced through drain-bulk capacitance, substrate coupling from planar spiral inductors at radio frequency via the oxide capacitance have not been reported. This paper presents experimental data and simulation results for inductor-induced noise in the substrate. Noise coupling from conventional and hollow inductors via the substrate to P+ diffusions with and without guard rings were also examined. A compact model of the inductor and substrate that can accurately match the measured inductor-induced noise is then derived. Using the inductor-substrate model, we investigated the effectiveness of various guard rings configurations to reducing substrate noise coupling, the trade-off between noise coupling and self-inductance, and the coupling of noise from the inductor of a tuned RF amplifier.

引用

页码：325 / 328

页数：4