Low noise FET design for wireless communications

被引：9

作者：

Franca-Neto, LM ^{[1
]}

Harris, JS ^{[1
]}

机构：

[1] Stanford Univ, Paul G Allen Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work explains a new and unified microscopic treatment for noise in semiconductor devices which is well suited for the design of low noise FET's for wireless communications applications. A computational procedure for the calculation of device noise performance is described and simulated results are compared with published results for Submicron CMOS transistors.

引用

页码：305 / 308

页数：4