Mode structure of the L3 photonic crystal cavity

被引：99

作者：

Chalcraft, A. R. A. ^{[1
]}

Lam, S.

O'Brien, D.

Krauss, T. F.

Sahin, M.

Szymanski, D.

Sanvitto, D.

Oulton, R.

Skolnick, M. S.

Fox, A. M.

Whittaker, D. M.

Liu, H.-Y.

Hopkinson, M.

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ St Andrews, Dept Phys & Astron, St Andrews KY16 9SS, Fife, Scotland

[3] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3 4, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 24期

基金：

英国工程与自然科学研究理事会;

关键词：

Cavity resonators - Light sources - Semiconducting indium compounds - Semiconductor quantum dots;

D O I：

10.1063/1.2748310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors investigate the multiple confined modes of GaAs L3 photonic crystal air-bridge cavities, using single layers of InAs quantum dots as active internal light sources. Theoretical results for the energies, quality factors, and emission polarizations of the first five modes are compared to experimental data for cavities with lattice periods ranging from 240 to 270 nm. The authors also present in-plane field distributions for each mode. In addition to the well-known quality factor improvement of the fundamental mode, they show that outward displacement of the end-holes selectively redshifts modes with large end-hole-field overlaps, thus reordering the modes. (c) 2007 American Institute of Physics.

引用

页数：3

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