46Gbit/s super-dynamic decision circuit module using InAlAs/InGaAs HEMTs

被引：7

作者：

Yoneyama, M

Otsuji, T

Imai, Y

Yamaguchi, S

Enoki, T

Umeda, Y

Hagimoto, K

机构：

[1] NTT, Opt Network Syst Labs, Kanagawa 239, Japan

[2] NTT, Syst Elect Labs, Kanagawa 239, Japan

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 17期

关键词：

high electron mobility transistors; decision circuits;

D O I：

10.1049/el:19971007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors describe a 46Gbit/s super-dynamic type decision circuit module that uses InAlAs/InGaAs HEMTs. Al a data rate of 40Gbit/s, the module shows an input data sensitivity of 104mV(pp) and a crock phase margin of 212 degrees.

引用

页码：1472 / 1474

页数：3

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[9]

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