Anisotropy and selectivity control of TMAH

被引：13

作者：

Tabata, O ^{[1
]}

机构：

[1] Ritsumeikan Univ, Fac Sci & Engn, Dept Mech Engn, Kusatsu, Shiga 52577, Japan

来源：

MICRO ELECTRO MECHANICAL SYSTEMS - IEEE ELEVENTH ANNUAL INTERNATIONAL WORKSHOP PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/MEMSYS.1998.659759

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A new approach to control the characteristics of TMAH silicon anisotropic etchant is proposed. The effects of potassium ions on TMAH etching characteristics at a concentration of 20 wt.% and temperature of 80 degrees C were investigated. A K2CO3 additive to the TMAH was used as a potassium ion source. The SiO2 etching rate increased with increasing the amount of added K2CO3. Anisotropic etching characteristics were measured using a wagon wheel pattern. It was observed that the etched wagon wheel pattern changed with increasing the amount of added K2CO3. This change was caused by a decrease in the etching rate in the silicon [014] direction. From these results, it is concluded that important characteristics of silicon anisotropic etching, such as selectivity to silicon dioxide and anisotropy, can be controlled by adding potassium ions to TMAH solution.

引用

页码：229 / 233

页数：3