Improved porous mixture of molybdenum nitride and tantalum oxide as a charge storage material

被引：41

作者：

Deng, CZ ^{[1
]}

Pynenburg, RAJ ^{[1
]}

Tsai, KC ^{[1
]}

机构：

[1] Pinnacle Res Inst Inc, Los Gatos, CA 95032 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 04期

关键词：

D O I：

10.1149/1.1838416

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

High surface area gamma-molybdenum nitride has shown promise as a charge storage material. The addition of amorphous tantalum oxide to the molybdenum nitride system not only improves the film cohesion tremendously, but also widens the voltage stability window from 0.8 to 1.1 V. This occurs without adversely effecting the capacitance.

引用

页码：L61 / L63

页数：3

共 8 条

[1] MOLYBDENUM NITRIDE CATALYSTS .1. INFLUENCE OF THE SYNTHESIS FACTORS ON STRUCTURAL-PROPERTIES
CHOI, JG
CURL, RL
THOMPSON, LT
[J]. JOURNAL OF CATALYSIS, 1994, 146 (01) : 218 - 227
[2] DENG CZ, 1997, ELECTROCHEMICAL SOC, P75
[3] CATALYSIS OVER MOLYBDENUM CARBIDES AND NITRIDES .1. CATALYST CHARACTERIZATION
RANHOTRA, GS
HADDIX, GW
BELL, AT
REIMER, JA
[J]. JOURNAL OF CATALYSIS, 1987, 108 (01) : 24 - 39
[4] ROBERSON SL, 1996, DOUBLE LAYER CAPACIT
[5] Materials for electrochemical capacitors - Theoretical and experimental constraints
Sarangapani, S
Tilak, BV
Chen, CP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (11) : 3791 - 3799
[6] SUN ZW, 1997, ELECTROCHEMICAL SOC, P43
[7] TONG RR, 1995, Patent No. 5464453
[8] WIXOM M, 1997, ELECTROCHEMICAL CAPA, P63

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