On the theory of the adsorption of a gas on a semiconductor

被引：3

作者：

Aroutiounian, VM ^{[1
]}

Aghababian, GS ^{[1
]}

机构：

[1] Yerevan State Univ, Yerevan 375049, Armenia

来源：

SURFACE REVIEW AND LETTERS | 1997年 / 4卷 / 05期

关键词：

D O I：

10.1142/S0218625X97001309

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

It is shown that a charging of the surface of a semiconductor by electrons can lead to an effective increase of the desorption, a new term in the kinetic equation and as a result the appearance of new regularities - both in the adsorption isotherm and in the kinetic equation. We point out the range of applications of the Langmuir and Henry theories as well as mentioned references where one observed root dependences of the surface conduction on the pressure by experiment.

引用

页码：1059 / 1061

页数：3