Fabrication of multilayer passive and active electric components on polymer using inkjet printing and low temperature laser processing

被引：138

作者：

Ko, Seung Hwan

Chung, Jaewon

Pan, Heng

Grigoropoulos, Costas P.

Poulikakos, Dimos

机构：

[1] Univ Calif Berkeley, Dept Mech Engn, Laser Thermal Lab, Berkeley, CA 94720 USA

[2] Korea Univ, Dept Mech Engn, Seoul 136701, South Korea

[3] ETH, Dept Mech & Proc Engn, Lab Thermodynam Emerging Technol, CH-8006 Zurich, Switzerland

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2007年 / 134卷 / 01期

基金：

美国国家科学基金会;

关键词：

flexible electronics; inkjet direct writing; nanoparticles laser ablation and sintering; OFET (organic field effect transistor); NALSA (nanomaterial assisted laser sintering and ablation); SPLA-DAT (selective pulsed laser ablation by different ablation threshold); semiconductor polymer;

D O I：

10.1016/j.sna.2006.04.036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low temperature fabrication of passive (conductor, capacitor) and active (field effect transistor) electrical components on flexible polymer substrate is presented in this paper. A drop-on-demand (DOD) ink-jetting system was used to print gold nano-particles suspended in Alpha-Terpineol solvent, PVP (poly-4-vinylphenol) in PGMEA (propylene glycol monomethyl ether acetate) solvent, semiconductor polymer (modified polythiophene) in chloroform solution to fabricate passive and active electrical components on flexible polymer substrates. Short pulsed laser ablation enabled finer electrical components to overcome the resolution limitation of inkjet deposition. Continuous argon ion laser was irradiated locally to evaporate the carrier solvent as well as sinter gold nano-particles. In addition, selective ablation of multilayered gold nanoparticle film was demonstrated using the novel SPLA-DAT (selective pulsed laser ablation by different ablation threshold) scheme for sintered and non-sintered gold nanoparticles. Finally, selective ablation of multilayered film was used to define narrow FET (field effect transistor) channel. Semiconductor polymer solution was deposited on top of channel to complete OFET (organic field effect transistor) fabrication. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：161 / 168

页数：8

共 14 条

[1] Microstructuring by printing and laser curing of nanoparticle solutions [J].