Automatic mask generation in x-ray lithography

被引：2

作者：

Bollepalli, BS ^{[1
]}

Khan, M ^{[1
]}

Cerrina, F ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Elect Engn, Madison, WI 53435 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 06期

关键词：

D O I：

10.1116/1.589621

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is well known that diffraction plays an important role in image formation in any photon-based lithographic system. Some of the consequences of diffraction are reduction in contrast of the aerial image and phenomenon such as line-end shortening. In this article we explore some computational schemes which modify the mask pattern so as to minimize the diffractional effects. Several papers have been written on this problem for the case of optical lithography. Here, we consider the case of x-ray lithography only. (C) 1997 American Vacuum Society.

引用

页码：2238 / 2242

页数：5

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