100-GHz Transistors from Wafer-Scale Epitaxial Graphene

被引：2120

作者：

Lin, Y. -M. ^{[1
]}

Dimitrakopoulos, C. ^{[1
]}

Jenkins, K. A. ^{[1
]}

Farmer, D. B. ^{[1
]}

Chiu, H. -Y. ^{[1
]}

Grill, A. ^{[1
]}

Avouris, Ph. ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

SCIENCE | 2010年 / 327卷 / 5966期

关键词：

D O I：

10.1126/science.1184289

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：662 / 662

页数：1

共 4 条

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NANO LETTERS, 2009, 9 (12) :4474-4478

[2] Operation of Graphene Transistors at Gigahertz Frequencies [J].

Lin, Yu-Ming ;

Jenkins, Keith A. ;

Valdes-Garcia, Alberto ;

Small, Joshua P. ;

Farmer, Damon B. ;

Avouris, Phaedon .

NANO LETTERS, 2009, 9 (01) :422-426

[3]

Meric I, 2008, INT EL DEVICES MEET, P513

[4] Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates [J].

Moon, J. S. ;

Curtis, D. ;

Hu, M. ;

Wong, D. ;

McGuire, C. ;

Campbell, P. M. ;

Jernigan, G. ;

Tedesco, J. L. ;

VanMil, B. ;

Myers-Ward, R. ;

Eddy, C., Jr. ;

Gaskill, D. K. .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (06) :650-652

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