High sensitivity CMOS microfluxgate sensor

被引：6

作者：

Schneider, M ^{[1
]}

Kawahito, S ^{[1
]}

Tadokoro, Y ^{[1
]}

Baltes, H ^{[1
]}

机构：

[1] ETH Zurich, Phys Elect Lab, CH-8093 Zurich, Switzerland

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650528

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first microfluxgate based on a standard CMOS process is presented. The ferromagnetic sensor cores are electrodeposited at room temperature on top of the chip passivation. The post-processing is fully compatible with all standard IC technologies. The second harmonic of the sensor output voltage exhibits a linear response to small magnetic fields below 50 mu T. The linearity error including hysteresis is smaller than 1.2% full scale. The angular field response deviates less than 1.6% from a sine function. The sensor has a maximum sensitivity of 2.7 V/T at 2 MHz at a power consumption of 60 mW. The equivalent signal noise is 6 nT/root Hz at 10 Hz.

引用

页码：907 / 910

页数：4