Progress in silicon-to-silicon direct bonding and its application to synchrotron x-ray optics

被引:2
作者
Graber, T [1 ]
Krasnicki, S [1 ]
Fernandez, PB [1 ]
Mills, DM [1 ]
Tong, QY [1 ]
Gosele, UM [1 ]
机构
[1] Univ Chicago, Ctr Adv Radiat Sources, Chicago, IL 60637 USA
来源
HIGH HEAT FLUX AND SYNCHROTRON RADIATION BEAMLINES | 1997年 / 3151卷
关键词
high-heat-flux optics; synchrotron radiation; silicon-to-silicon direct bonding; x-ray monochromator;
D O I
10.1117/12.294498
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
X-ray optical elements (such as single-crystal silicon monochromators) illuminated with high-power synchrotron-radiation beams produced by insertion devices and, to a lesser extent bending magnets, require cooling. When operating a silicon crystal at room temperature, channels for the coolant are often fabricated directly beneath the diffracting surface. Then a separate silicon distribution manifold/plenum is manufactured, and the components are bonded together using an adhesive or some intermediate material. In many cases, such monochromators suffer from strains induced by the bond. A silicon-to-silicon direct-bonding technique (i.e., without any intermediate material) has been developed that appears to be an attractive method for creating a bond with less strain between two pieces of silicon. This technique is well understood for the case of thin wafers (similar to 0.5 mm thickness) and is used by the semiconductor industry. Recently, bonding of 16-mm-thick 10-cm-diameter silicon crystals has been successfully performed inducing very little strain. A short review of the silicon-to-silicon direct-bonding process will be presented with an emphasis on its application to room temperature high-heat-load x-ray optics along with the present status of direct bonding efforts at the APS.
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页码:54 / 64
页数:11
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