Interface tuning of the InAs/AlSb heterostructure-based quantum wells

被引：2

作者：

Ichizli, VM ^{[1
]}

Mutamba, K ^{[1
]}

Droba, M ^{[1
]}

Sigurdardóttir, A ^{[1
]}

Hartnagel, HL ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Inst Hochfrequenztech, D-64283 Darmstadt, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 04期

关键词：

D O I：

10.1116/1.1303810

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work shows the importance of interface consideration at the barrier sides for quantum well (QW)-based semiconductor structures, on the example of the InAs/AlSb heterostructure. Various interface combinations of AlAs and InSb type have been included in an LnAs/AlSb double-barrier resonant-tunneling-diode structure, and the resulting transmission functions have been calculated. A systematic comparison of the resulting structures with each other and also with the traditional case without interface consideration have been made. Clear tendencies and relationships observed in the transmission characteristics of the different structures let the interface tuning emerge as a quality tool for QW-device tayloring. (C) 2000 American Vacuum Society. [S0734-211X(00)01404-9].

引用

页码：2279 / 2283

页数：5

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