Origin of the enhanced space-charge-limited current in poly(p-phenylene vinylene) -: art. no. 193202
被引:162
作者:
Tanase, C
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机构:Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
Tanase, C
Blom, PWM
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机构:Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
Blom, PWM
de Leeuw, DM
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机构:Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
de Leeuw, DM
机构:
[1] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
来源:
PHYSICAL REVIEW B
|
2004年
/
70卷
/
19期
关键词:
D O I:
10.1103/PhysRevB.70.193202
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
It is demonstrated that the enhancement of the space-charge-limited (SCL) hole current of poly(p-phenylene vinylene) (PPV) derivatives at high bias at room temperature is due to the carrier density dependence of the hole mobility. Contrary to numerous reports the dependence of the mobility on the electric field is only observed at low temperatures. Analysis of the hole transport without taking into account the charge carrier density dependence of the mobility leads to an incorrect charge carrier and electric field distributions in organic light-emitting diodes.