Graphene: Materially Better Carbon

被引:169
作者
Fuhrer, Michael S.
Lau, Chun Ning
MacDonald, Allan H.
机构
基金
美国国家科学基金会;
关键词
BERRYS PHASE; SUSPENDED GRAPHENE; LARGE-AREA; TRANSPORT; GRAPHITE; SCATTERING; FILMS; GAS; HYDROGENATION; DEVICES;
D O I
10.1557/mrs2010.551
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Graphene, a single atom thick plane of carbon atoms arranged in a honeycomb lattice, has captivated the attention of physicists, materials scientists, and engineers alike over the five years following its experimental isolation. Graphene is a fundamentally new type of electronic material whose electrons are strictly confined to a two-dimensional plane and exhibit properties akin to those of ultrarelativistic particles. Graphene's two-dimensional form suggests compatibility with conventional wafer processing technology. Extraordinary physical properties, including exceedingly high charge carrier mobility, current-carrying capacity, mechanical strength, and thermal conductivity, make it an enticing candidate for new electronic technologies both within and beyond complementary metal oxide semiconductors (CMOS). Immediate graphene applications include high-speed analog electronics and highly conductive, flexible, transparent thin films for displays and optoelectronics. Currently, much graphene research is focused on generating and tuning a bandgap and on novel device structures that exploit graphene's extraordinary electrical, optical, and mechanical properties.
引用
收藏
页码:289 / 295
页数:7
相关论文
共 110 条
[1]   Theory of the pseudospin resonance in semiconductor bilayers [J].
Abedinpour, Saeed H. ;
Polini, Marco ;
MacDonald, A. H. ;
Tanatar, B. ;
Tosi, M. P. ;
Vignale, G. .
PHYSICAL REVIEW LETTERS, 2007, 99 (20)
[2]   A self-consistent theory for graphene transport [J].
Adam, Shaffique ;
Hwang, E. H. ;
Galitski, V. M. ;
Das Sarma, S. .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 104 (47) :18392-18397
[3]   Berry's phase and absence of back scattering in carbon nanotubes [J].
Ando, T ;
Nakanishi, T ;
Saito, R .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1998, 67 (08) :2857-2862
[4]   Screening effect and impurity scattering in monolayer graphene [J].
Ando, Tsuneya .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2006, 75 (07)
[5]   Scanned probe microscopy of electronic transport in carbon nanotubes [J].
Bachtold, A ;
Fuhrer, MS ;
Plyasunov, S ;
Forero, M ;
Anderson, EH ;
Zettl, A ;
McEuen, PL .
PHYSICAL REVIEW LETTERS, 2000, 84 (26) :6082-6085
[6]   Superior thermal conductivity of single-layer graphene [J].
Balandin, Alexander A. ;
Ghosh, Suchismita ;
Bao, Wenzhong ;
Calizo, Irene ;
Teweldebrhan, Desalegne ;
Miao, Feng ;
Lau, Chun Ning .
NANO LETTERS, 2008, 8 (03) :902-907
[7]  
Bao WZ, 2009, NAT NANOTECHNOL, V4, P562, DOI [10.1038/nnano.2009.191, 10.1038/NNANO.2009.191]
[8]   Chemical Modification of Epitaxial Graphene: Spontaneous Grafting of Aryl Groups [J].
Bekyarova, Elena ;
Itkis, Mikhail E. ;
Ramesh, Palanisamy ;
Berger, Claire ;
Sprinkle, Michael ;
de Heer, Walt A. ;
Haddon, Robert C. .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (04) :1336-+
[9]   Antimonide-based compound semiconductors for electronic devices: A review [J].
Bennett, BR ;
Magno, R ;
Boos, JB ;
Kruppa, W ;
Ancona, MG .
SOLID-STATE ELECTRONICS, 2005, 49 (12) :1875-1895
[10]   Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].
Berger, C ;
Song, ZM ;
Li, TB ;
Li, XB ;
Ogbazghi, AY ;
Feng, R ;
Dai, ZT ;
Marchenkov, AN ;
Conrad, EH ;
First, PN ;
de Heer, WA .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916