Ionization potential, electron affinity, electronegativity, hardness, and electron excitation energy: Molecular properties from density functional theory orbital energies

被引:1318
作者
Zhan, CG [1 ]
Nichols, JA [1 ]
Dixon, DA [1 ]
机构
[1] Pacific NW Natl Lab, William R Wiley Environm Mol Sci Lab, Richland, WA 99352 USA
关键词
D O I
10.1021/jp0225774
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Representative atomic and molecular systems, including various inorganic and organic molecules with covalent and ionic bonds, have been studied by using density functional theory. The calculations were done with the commonly used exchange-correlation functional B3LYP followed by a comprehensive analysis of the calculated highest-occupied and lowest-unoccupied Kohn-Sham orbital (HOMO and LUMO) energies. The basis set dependence of the DFT results shows that the economical 6-31+G* basis set is generally sufficient for calculating the HOMO and LUMO energies (if the calculated LUMO energies are negative) for use in correlating with molecular properties. The directly calculated ionization potential (IP), electron affinity (EA), electronegativity (chi), hardness (eta), and first electron excitation energy (iota) are all in good agreement with the available experimental data. A generally applicable linear correlation relationship exists between the calculated HOMO energies and the experimental/calculated IPs. We have also found satisfactory linear correlation relationships between the calculated LUMO energies and experimental/calculated EAs (for the bound anionic states), between the calculated average HOMO/LUMO energies and chi values, between the calculated HOMO-LUMO energy gaps and eta values, and between the calculated HOMO-LUMO energy gaps and experimental/calculated first excitation energies. By using these linear correlation relationships, the calculated HOMO and LUMO energies can be employed to semiquantitatively estimate ionization potential, electron affinity, electronegativity, hardness, and first excitation energy.
引用
收藏
页码:4184 / 4195
页数:12
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