Temperature dependence of Ti3+ doped sapphire whispering gallery mode resonator

被引：18

作者：

Hartnett, JG ^{[1
]}

Tobar, ME

Mann, AG

Krupka, J

Ivanov, EN

机构：

[1] Univ Western Australia, Dept Phys, Nedlands, WA 6907, Australia

[2] Warsaw Univ Technol, Dept Elect, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 02期

关键词：

Cryogenic liquids - Dielectric devices - Low temperature operations - Nitrogen - Sapphire - Semiconductor doping - Single crystals - Thermal effects - Titanium;

D O I：

10.1049/el:19980177

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method of compensating the frequency-temperature dependence of high-Q sapphire dielectric resonators near liquid nitrogen temperature is presented. This is achieved by doping monocrystalline sapphire with Ti3+ ions. This technique offers significant advantages over other methods.

引用

页码：195 / 196

页数：2

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