Nondestructive measurement of interfacial SiO2 films formed during deposition and annealing of Ta2O5

被引：54

作者：

Devine, RAB

机构：

[1] France Télécom-CNET, 38243 Meylan

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 14期

关键词：

D O I：

10.1063/1.115627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is demonstrated that infrared absorption spectroscopy of the transverse optic and longitudinal optic vibrational modes of the asymmetric bridging oxygen stretch in amorphous SiO2 may be used to conveniently estimate film thickness in sandwiched structures. Measurements have been made on the SiO2 film formed at the substrate/dielectric interface during deposition of Ta2O5 on Si substrates and the evolution of its thickness during subsequent annealing. The accuracy of the film thickness determined is compared with electron microscopy observations. (C) 1996 American Institute of Physics.

引用

页码：1924 / 1926

页数：3

共 9 条

[1]

AUTRAN JL, UNPUB

[2] EFFECT OF OZONE ANNEALING ON THE DIELECTRIC-PROPERTIES OF TANTALUM OXIDE THIN-FILMS GROWN BY CHEMICAL VAPOR-DEPOSITION [J].