Vertically aligned ZnO nanostructures grown on graphene layers

被引：163

作者：

Kim, Yong-Jin ^{[2
]}

Lee, Jae-Hyun ^{[1
]}

Yi, Gyu-Chul ^{[1
]}

机构：

[1] Seoul Natl Univ, Natl Creat Res Initiat, Ctr Semicond Nanorods, Dept Phys & Astron, Seoul 151747, South Korea

[2] POSTECH, Natl Creat Res Initiat, Ctr Semicond Nanorods, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 21期

关键词：

graphene; II-VI semiconductors; MOCVD; nanofabrication; nanostructured materials; nucleation; photoluminescence; semiconductor growth; surface morphology; vapour phase epitaxial growth; wide band gap semiconductors; zinc compounds; PHASE; EXCITON;

D O I：

10.1063/1.3266836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the vertical growth of ZnO nanostructures on graphene layers and their photoluminescence (PL) characteristics. ZnO nanostructures were grown vertically on the graphene layers using catalyst-free metal-organic vapor-phase epitaxy. The surface morphology of the ZnO nanostructures on the graphene layers depended strongly on the growth temperature. Further, interesting growth behavior leading to the formation of aligned ZnO nanoneedles in a row and vertically aligned nanowalls was also observed and explained in terms of enhanced nucleation on graphene step edges and kinks. Additionally, the optical characteristics and carbon incorporation into ZnO were investigated using variable-temperature PL spectroscopy.

引用

页数：3

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